| PART |
Description |
Maker |
| TPCF8104 TPCF810407 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS?
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSコ)
|
Toshiba Semiconductor
|
| TPCP8302 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS?
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSコ)
|
Toshiba Semiconductor
|
| TPC8202 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE−MOSVI)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK1717 |
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
|
Toshiba Semiconductor
Sanken electric
|
| TPC8A03-H |
TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode
|
Toshiba Semiconductor
|
| SSM6N04FU |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
|
| TPCA8A04-H |
TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode
|
Toshiba Semiconductor
|
| TPC8105-H |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII)
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U−MOSII)
|
Toshiba Semiconductor
Toshiba Corporation
|
| SSM6J410TU-14 |
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS3)
|
Toshiba Semiconductor
|
| SSM3J135TU-14 |
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)
|
Toshiba Semiconductor
|
| SSM3J133TU-14 |
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)
|
Toshiba Semiconductor
|
| TPCS8204 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
|
TOSHIBA[Toshiba Semiconductor]
|
